4inch SiC Epitaxial Wafer 4H-N Diameter 100mm Thickness 350μm Prime Grade

4inch SiC Epitaxial Wafer 4H-N Diameter 100mm Thickness 350μm Prime Grade

As a core material for silicon carbide (SiC) power device manufacturing, the 4-inch SiC epitaxial wafer is based on a 4H-N-type SiC wafer, grown using chemical vapor deposition (CVD) to produce a high-uniformity, low-defect-density single-crystal thin film. Its technical advantages include: ​​

· Crystal Structure​​: (0001) silicon-face orientation with a 4° offcut to optimize lattice matching and reduce micropipe/stacking fault defects.

· ​​Electrical Performance​​: N-type doping concentration precisely controlled between 2×10¹⁴–2×10¹⁹ cm⁻³ (±14% tolerance), achieving resistivity adjustable from 0.015–0.15 Ω·cm via in-situ doping technology.

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· Defect Control​​: Surface defect density <25 cm⁻² (TSD/TED), triangular defect density <0.5 cm⁻², ensured by magnetic-field-assisted growth and real-time monitoring.

Leveraging domestically developed CVD equipment clusters, ZMSH achieves full-process control from wafer processing to epitaxial growth, supporting rapid small-batch trials (minimum 50 wafers) and customized solutions for applications in new energy vehicles, photovoltaic inverters, and 5G base stations.

Key parameters for 4inch SiC epitaxial wafers​​

​Core characteristics & technical breakthroughs​​ of 4inch SiC epitaxial wafers​​

​1. Material Performance​​ ​​

- Thermal Conductivity​​: >350 W/m·K, ensuring stable operation at >200°C, 3× higher than silicon. ​​

- Breakdown Field Strength​​: >3 MV/cm, enabling 10kV+ high-voltage devices with optimized thickness (10–100 μm). ​​

- Carrier Mobility​​: Electron mobility >900 cm²/(V·s), enhanced by gradient doping for faster switching.

​​2. Process Advantages​​ ​​

- Thickness Uniformity​​: <3% (9-point test) via dual-temperature zone reactors, supporting 5–100 μm thickness control. ​​

- Surface Quality​​: Ra <0.5 nm (AFM), optimized by hydrogen etching and chemical mechanical polishing (CMP). ​​

- Defect Density​​: Micropipe density <1 cm⁻², minimized through reverse-bias annealing. ​​

3. Customization Capabilities​​ ​​

- Crystal Orientation​​: Supports (0001) silicon-face, (11-20) carbon-face, and quasi-homoepitaxial growth for trench MOSFETs and JBS diodes. ​​

- Packaging Compatibility​​: Offers double-sided polishing (Ra <0.5 nm) and wafer-level packaging (WLP) for TO-247/DFN.

​​Application scenarios & technical value​​ of 4inch SiC epitaxial wafers

1. ​​New Energy Vehicles​​

​​- Main Drive Inverters​​: 1200V epitaxial wafers for SiC MOSFET modules, improving system efficiency to 98% and reducing EV range loss by 10–15%.
- ​​Fast Charging​​: 600V wafers enabling 800V platforms for 30-minute 80% charging (e.g., Tesla, NIO).
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2. Industrial & Energy​​

​​- Solar Inverters​​: 1700V wafers for DC-AC conversion, boosting efficiency to 99% and lowering LCOE by 5–8%.
- ​​Smart Grids​​: 10kV wafers for solid-state transformers (SST), reducing transmission losses to <0.5%.
 

3. ​​Optoelectronics & Sensing​​

​​- UV Detectors​​: Utilizing 3.2 eV bandgap for 200–280 nm detection in flame monitoring and biochemical threat detection.
- ​​GaN-on-SiC RF Devices​​: HEMTs on 4-inch wafers for 5G base stations, achieving 70% PA efficiency.
 

4. ​​Railway & Aerospace​​

- ​​Traction Inverters​​: High-temperature wafers (-55°C–200°C) for IGBT modules in bullet trains (AEC-Q101 certified).
​​- Satellite Power​​: Radiation-hardened wafers (>100 krad(Si)) for deep-space DC-DC converters.

ZMSH's service of SiC wafer

1. Core Competencies​​
· ​​Full-Size Coverage​​: 2–12-inch SiC substrates/epitaxial wafers, including 4H/6H-N, HPSI, SEMI, and 3C-N polytypes.
· ​​Custom Fabrication​​: Custom cutting (through-holes, sectors), double-side polishing, and WLP.
​​· End-to-End Solutions​​: CVD epitaxy, ion implantation, annealing, and device validation.
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2. Production Capacity​​
· ​​6-inch Wafers​​: 360,000 annual capacity; 8-inch R&D line operational.
· ​​Certifications​​: IATF 16949-certified, >95% yield for automotive-grade products.
​​· Cost Leadership​​: 75% domestic CVD equipment, 25% lower costs vs. international competitors.

The following is the recommended 3C-N type for SiC substrates: