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Safir Gofret
Created with Pixso. Single Crystal Square Sapphire Substrate ( C-plane , SSP )10x10 mm Single Side Polished

Single Crystal Square Sapphire Substrate ( C-plane , SSP )10x10 mm Single Side Polished

Marka Adı: ZMSH
Adedi: 10
Teslim Zamanı: 2-4 hafta
Ödeme Şartları: T/T
Ayrıntılı Bilgiler
Menşe yeri:
Şangay
Malzeme:
Yüksek Saflık >%99,99, Tek Kristal Al₂O₃
Boyut:
10 × 10 mm
Kalınlık:
1 mm (talep üzerine diğer kalınlıklar da mevcuttur)
Oryantasyon:
C düzlemi (0001) ila M (1-100) 0,2° ± 0,1° kapalı
Kafes Parametresi:
a = 4,785 Å, c = 12,991 Å
Yoğunluk:
3,98 gr/cm³
Termal genleşme katsayısı:
6,66×10⁻⁶ /°C (‖C ekseni), 5×10⁻⁶ /°C (⊥C ekseni)
Dielektrik mukavemet:
4,8×10⁵ V/cm
Dielektrik sabiti:
11,5 (‖C ekseni), 9,3 (⊥C ekseni) @ 1 MHz
dielektrik kayıp teğet:
< 1×10⁻⁴
Isı İletkenliği:
20°C'de 40 W/(m·K)
Parlatma:
Tek tarafı cilalanmış (SSP), Ra < 0,3 nm (AFM); arka taraf ince öğütülmüş Ra = 0,8–1,2 μm
Vurgulamak:

SSP Sapphire Substrate

,

Single Crystal Square Sapphire Substrate

,

C-plane Sapphire Substrate

Ürün Açıklaması

Single Crystal Square Sapphire Substrate (C-plane, SSP)10x10 mm Single Side Polished

Square Sapphire Substrate (SSP) Product Description

The Square Sapphire Substrate (SSP) is made from high-purity (>99.99%) single crystal Al₂O₃, offering excellent mechanical strength, thermal stability, and optical transparency. With C-plane (0001) orientation and single-side polished (SSP) surface, it is ideal for epitaxial growth, GaN-based LED production, optical components, and high-temperature or vacuum applications.

Square Sapphire Substrate (SSP) Key Specifications

Parameter Specification
Material High Purity >99.99%, Single Crystal Al₂O₃
Dimension 10 × 10 mm
Thickness 1 mm (other thicknesses available upon request)
Orientation C-plane (0001) to M (1-100) 0.2° ± 0.1° off
Lattice Parameter a = 4.785 Å, c = 12.991 Å
Density 3.98 g/cm³
Thermal Expansion Coefficient 6.66×10⁻⁶ /°C (‖C-axis), 5×10⁻⁶ /°C (⊥C-axis)
Dielectric Strength 4.8×10⁵ V/cm
Dielectric Constant 11.5 (‖C-axis), 9.3 (⊥C-axis) @ 1 MHz
Dielectric Loss Tangent < 1×10⁻⁴
Thermal Conductivity 40 W/(m·K) at 20°C
Polishing Single side polished (SSP), Ra < 0.3 nm (AFM); backside fine-ground Ra = 0.8–1.2 μm

Square Sapphire Substrate (SSP)  Features & Benefits

  • Exceptional chemical and thermal stability

  • High optical transparency and surface flatness

  • Low dielectric loss and high thermal conductivity

  • Excellent mechanical hardness and scratch resistance

  • Available in custom sizes, orientations, and thicknesses

Square Sapphire Substrate (SSP)  Applications

  • GaN and AlN epitaxial growth

  • LED and laser diode manufacturing

  • Optical and infrared windows

  • High-power RF and microwave devices

  • Research and semiconductor testing